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M24C16-BN6TP - 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM 45 V, 100 mA NPN general-purpose transistors General purpose PIN diode 12-Bit, 2.5 us Dual DAC, Serial Input, Pgrmable Settling Time, Simultaneous Update, Low Power 8-CDIP -55 to 125 8-Bit Constant-Current LED Sink Driver 16-TSSOP -40 to 125 Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: Yes CRIMP SET 0.14 - 0.50MM ; NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f_T: 1 GHz; Frequency: 4.5 MHz; I_C: 25 mA; Noise figure: 4.5@f1 dB; P_tot: 300 mW; Polarity: NPN ; VCEO max: 15 V 16-Channel LED Driver 100-HTQFP -20 to 85 8-Bit Constant-Current LED Sink Driver 16-SOIC -40 to 125 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC -40 to 85 Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-PDIP -40 to 85 ER 4C 4#4 PIN RECP WALL 8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC 0 to 70 Power LDMOS transistor Three quadrant triacs guaranteed commutation - I_GT: 25 mA; I_T (R_MS): 16 A; V_DRM: 600 V 18-Bit Registered Transceiver With 3-State Outputs 56-SSOP -40 to 85 45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I_C max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V ER 4C 4#4 SKT RECP WALL Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75 8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC -40 to 85 NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V ER 23C 16 12 8 4 PIN RECP WALL D87 - CONNECTOR ACCESSORY ER 5C 3#12 2#0 SKT RECP WALL Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9 P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V Removal Tool Han E Crimpcontacts in E Mo; RoHS Compliant:N/A PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; V

M24C16-BN6TP_323637.PDF Datasheet

Part No.

M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W

Description

16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
45 V, 100 mA NPN general-purpose transistors
General purpose PIN diode
12-Bit, 2.5 us Dual DAC, Serial Input, Pgrmable Settling Time, Simultaneous Update, Low Power 8-CDIP -55 to 125
8-Bit Constant-Current LED Sink Driver 16-TSSOP -40 to 125
Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: Yes
CRIMP SET 0.14 - 0.50MM ;
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f_T: 1 GHz; Frequency: 4.5 MHz; I_C: 25 mA; Noise figure: 4.5@f1 dB; P_tot: 300 mW; Polarity: NPN ; VCEO max: 15 V
16-Channel LED Driver 100-HTQFP -20 to 85
8-Bit Constant-Current LED Sink Driver 16-SOIC -40 to 125
8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC -40 to 85
Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-PDIP -40 to 85
ER 4C 4#4 PIN RECP WALL
8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC 0 to 70
Power LDMOS transistor
Three quadrant triacs guaranteed commutation - I_GT: 25 mA; I_T (R_MS): 16 A; V_DRM: 600 V
18-Bit Registered Transceiver With 3-State Outputs 56-SSOP -40 to 85
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I_C max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 4C 4#4 SKT RECP WALL
Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75
8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC -40 to 85
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V
ER 23C 16 12 8 4 PIN RECP WALL
D87 - CONNECTOR ACCESSORY
ER 5C 3#12 2#0 SKT RECP WALL
Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V
Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9
P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V
Removal Tool Han E Crimpcontacts in E Mo; RoHS Compliant:N/A
PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; VThree quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; Number of pins: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V
Silicon RF switches - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V
Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V
Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V
NPN general purpose double transistor - Description: Current Mirror
ER 30C 24#16 6#12 SKT RECP WAL
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 35C 28#16 7#12 SKT RECP WAL
ER 35C 28#16 7#12 PIN RECP WAL
Dual high-voltage switching diodes
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
PowerMOS transistor TOPFET high side switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
CONNECTOR ACCESSORY 连接器附
8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
Replaced by TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
TOPFET high side switch SMD version 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
For Use With:Harting Han D Contacts; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded Process Compatible:Yes 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS

File Size

173.56K / 29 Page

Maker

STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: M24C16-BN6

Maker: STM

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Full text search : 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM 45 V, 100 mA NPN general-purpose transistors General purpose PIN diode 12-Bit, 2.5 us Dual DAC, Serial Input, Pgrmable Settling Time, Simultaneous Update, Low Power 8-CDIP -55 to 125 8-Bit Constant-Current LED Sink Driver 16-TSSOP -40 to 125 Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: Yes CRIMP SET 0.14 - 0.50MM ; NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; f_T: 1 GHz; Frequency: 4.5 MHz; I_C: 25 mA; Noise figure: 4.5@f1 dB; P_tot: 300 mW; Polarity: NPN ; VCEO max: 15 V 16-Channel LED Driver 100-HTQFP -20 to 85 8-Bit Constant-Current LED Sink Driver 16-SOIC -40 to 125 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC -40 to 85 Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-PDIP -40 to 85 ER 4C 4#4 PIN RECP WALL 8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC 0 to 70 Power LDMOS transistor Three quadrant triacs guaranteed commutation - I_GT: 25 mA; I_T (R_MS): 16 A; V_DRM: 600 V 18-Bit Registered Transceiver With 3-State Outputs 56-SSOP -40 to 85 45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; I_C max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V ER 4C 4#4 SKT RECP WALL Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75 8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC -40 to 85 NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V ER 23C 16 12 8 4 PIN RECP WALL D87 - CONNECTOR ACCESSORY ER 5C 3#12 2#0 SKT RECP WALL Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9 P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V Removal Tool Han E Crimpcontacts in E Mo; RoHS Compliant:N/A PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; V Three quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; Number of pins: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V Silicon RF switches - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V NPN general purpose double transistor - Description: Current Mirror ER 30C 24#16 6#12 SKT RECP WAL 45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V ER 35C 28#16 7#12 SKT RECP WAL ER 35C 28#16 7#12 PIN RECP WAL Dual high-voltage switching diodes The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS PowerMOS transistor TOPFET high side switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS CONNECTOR ACCESSORY 连接器附 8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM Replaced by TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM TOPFET high side switch SMD version 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS For Use With:Harting Han D Contacts; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded Process Compatible:Yes 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS

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M95010-SBN3T M95010-SBN5T M95010-SBN6T M95020-SBN3	4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock	ST Microelectronics
M93S56-WMN6 M93S56-WMN6G M93S46-BN3/W M93S46-BN6 M	4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection 4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE Serial Access EEPROM with Block Protection 4Kbit 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection	ST Microelectronics
EP8274NBSP EP8274 EP8289 EP8290 EP8291 EP8292 EP82	14 Pin DIP 5 Tap Low Power TTL Compatible Active Delay Lines ACTIVE DELAY LINE, TRUE OUTPUT, PDIP8 CPU Supervisor with 16Kbit SPI EEPROM; Temperature Range: -40°C to 85°C; Package: 8-PDIP CPU Supervisor with 16Kbit SPI EEPROM; Temperature Range: 0°C to 70°C; Package: 8-PDIP CPU Supervisor with 8Kbit SPI EEPROM; Temperature Range: 0°C to 70°C; Package: 8-SOIC CPU Supervisor with 8Kbit SPI EEPROM; Temperature Range: 0°C to 70°C; Package: 8-TSSOP CPU Supervisor with 8Kbit SPI EEPROM; Temperature Range: -40°C to 85°C; Package: 8-TSSOP CPU Supervisor with 8Kbit SPI EEPROM; Temperature Range: -40°C to 85°C; Package: 8-SOIC From old datasheet system Tapped Delay Line	PCA ELECTRONICS INC. PCA Electronics Inc
ISL9601706 ISL96017WIRT8Z ISL96017UIRT8Z ISL96017	128-Tap DCP, 16kbit EEPROM, and I2C Serial Interface(128抽头DCP, 16kbit EEPROM, I2C串行接口) 128抽头磷酸氢钙16kbit EEPROM和I2C串行接口28抽头应课税品许可证，16kbit的EEPROM和I2C串行接口	Intersil, Corp. Intersil Corporation
EP910ILI-12 EP910LC-30T EP910LI-35 EP910PI-35 EP91	CPU Supervisor with 16Kbit SPI EEPROM; Temperature Range: -40°C to 85°C; Package: 8-PDIP CPU Supervisor with 16Kbit SPI EEPROM; Temperature Range: 0°C to 70°C; Package: 8-SOIC CPU Supervisor with 16Kbit SPI EEPROM; Temperature Range: 0°C to 70°C; Package: 14-TSSOP UV-Erasable/OTP PLD CPU Supervisor with 16Kbit SPI EEPROM; Temperature Range: 0°C to 70°C; Package: 8-PDIP RTC Module With CPU Supervisor 时钟模块CPU监控	Rochester Electronics, LLC
SC23R01T01002	8KBIT CONTACTLESS IC CARD	Silan Microelectronics Joint-stock
X5083_06 X5083 X5083P X5083P-2.7 X5083P-2.7A X5083	CPU Supervisor with 8Kbit SPI EEPROM	INTERSIL[Intersil Corporation]

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